PMV60EN,215

PMV60EN,215 datasheet

Маркировка

PMV60EN,215
Производитель

NXP Semiconductors
Описание

NXP Semiconductors PMV60EN,215 Configuration: Single Continuous Drain Current: 4.7 A Current - Continuous Drain (id) @ 25?° C: 4.7A Drain To Source Voltage (vdss): 30V Drain-source Breakdown Voltage: 30 V Fet Feature: Logic Level Gate Fet Type: MOSFET N-Channel, Metal Oxide Gate Charge (qg) @ Vgs: 9.4nC @ 10V Gate-source Breakdown Voltage: +/- 20 V ID_COMPONENTS: 1950595 Input Capacitance (ciss) @ Vds: 350pF @ 30V Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Operating Temperature: + 150 C Minimum Operating Temperature: - 55 C Mounting Style: SMD/SMT Mounting Type: Surface Mount Package / Case: SOT-23-3, TO-236-3, Micro3?„?, SSD3, SST3 Power - Max: 2W Power Dissipation: 2000 mW Rds On (max) @ Id, Vgs: 55 mOhm @ 2A, 10V Resistance Drain-source Rds (on): 0.055 Ohm @ 10 V Series: TrenchMOS?„? Transistor Polarity: N-Channel Vgs(th) (max) @ Id: 2V @ 1mA Product Category: MOSFET RoHS: yes Drain-Source Breakdown Voltage: 30 V Gate-Source Breakdown Voltage: +/- 20 V Resistance Drain-Source RDS (on): 0.055 Ohms Fall Time: 5.5 ns Rise Time: 7 ns Factory Pack Quantity: 3000 Typical Turn-Off Delay Time: 16 ns Part # Aliases: PMV60EN T/R Other Names: 568-2357-2, 934057520215, PMV60EN T/R
Количество страниц

12 шт.
Форматы файла

HTML, PDF
(Для просмотра требуется Adobe Acrobat Reader)